unisonic technologies co., ltd 2sb1260 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r208-017,e power transistor ? description the utc 2sb1260 is a epitaxial planar type pnp silicon transistor. ? features * high breakdown voltage and high current. * bv ceo = -80v, i c = -1a * good h fe linearity. * low v ce(sat) lead-free: 2sb1260l halogen-free: 2sb1260g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing 2sb1260-x-ab3-r 2sb1260l-x-ab3-r 2SB1260G-X-AB3-R sot-89 b c e tape reel 2sb1260-x-tn3-r 2sb1260l-x-tn3-r 2sb1260g-x-tn3-r to-252 b c e tape reel
2sb1260 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r208-017,e ? absoluate maxium ratings (ta = 25 ) parameter symbol ratings unit collector -base voltage v cbo -80 v collector -emitter voltage v ceo -80 v emitter -base voltage v ebo -5 v peak collector current ( single pulse, pw=100ms) i cm -2 a dc collector current i c -1 a sot-89 0.5 w power dissipation to-252 p d 1.9 w junction temperature t j +150 storage temperature t stg -40 ~ +150 note 1. printed circuit board,1.7mm th ick, collector copper plating 100mm 2 or larger. 2. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = -50 a -80 v collector emitter breakdown voltage bv ceo i c = -1ma -80 v emitter base breakdown voltage bv ebo i e = -50 a -5 v collector cut-off current i cbo v cb =-60v -1 a emitter cut-off current i ebo v eb =-4v -1 a dc current gain(note 1) h fe v ce =-3v, i out =-0.1a 82 390 collector-emitter satu ration voltage v ce(sat) i c =-500ma, i b =-50ma -0.4 v transition frequency f t v ce = -5v, i e =50ma, f=30mhz 100 mhz output capacitance cob v cb =-10v, i e =0, f=1mhz 25 pf note 1: pulse test: p w <300 s, duty cycle<2% ? classification of h fe rank p q r range 82 ~ 180 120 ~ 270 180 ~ 390
2sb1260 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r208-017,e typical characterics collector current, ic(ma) dc current gain, h fe collector current, ic(ma) collector saturation voltage, v ce(sat) ( v) collector output capacitance, cob (pf) transition frequency, f t (mhz)
2sb1260 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r208-017,e ? typical characterics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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